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| Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm s Features q q q 2.8 -0.3 0.650.15 +0.2 1.5 -0.05 +0.25 0.650.15 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 30 20 3 15 150 150 -55 ~ +150 V V V mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : U s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency Common emitter reverse transfer capacitance Power gain Noise figure (Ta=25C) Symbol VCBO VEBO hFE* VBE fT Cre PG NF Conditions IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA, f = 100MHz VCE = 6V, IC = 1mA, f = 10.7MHz VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA, f = 100MHz 450 min 30 3 40 0.72 650 0.8 24 3.3 1 260 V MHz pF dB dB typ max Unit V V *h FE Rank classification Rank hFE Marking Symbol B 40 ~ 110 UB C 65 ~ 160 UC D 100 ~ 260 UD 0 to 0.1 Ratings Unit 0.1 to 0.3 0.40.2 0.8 (Ta=25C) 1.1 -0.1 0.16 -0.06 +0.2 +0.1 0.4 -0.05 Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 0.95 3 +0.1 1.45 1 Transistor PC -- Ta 200 12 Ta=25C 175 10 IB=100A 10 2SC2404 IC -- VCE 12 VCE=6V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 8 80A Collector current IC (mA) 18 8 60A 6 40A 4 20A 6 4 2 2 0 0 6 12 0 0 60 120 180 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 30 VCE=6V 25 25C Ta=75C 20 -25C 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 360 hFE -- IC VCE=6V Forward current transfer ratio hFE 300 Collector current IC (mA) 240 Ta=75C 25C 120 -25C 15 180 10 25C Ta=75C 5 -25C 60 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE Common emitter reverse transfer capacitance Cre (pF) 1200 VCB=6V Ta=25C 2.4 Cre -- VCE Collector output capacitance Cob (pF) IC=1mA f=10.7MHz Ta=25C 1.2 Cob -- VCB IE=0 f=1MHz Ta=25C Transition frequency fT (MHz) 1000 2.0 1.0 800 1.6 0.8 600 1.2 0.6 400 0.8 0.4 200 0.4 0.2 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 0.1 0 0.3 1 3 10 30 100 0 5 10 15 20 25 30 Emitter current IE (mA) Collector to emitter voltage VCE (V) Collector to base voltage VCB (V) 2 Transistor PG -- IE 40 35 f=100MHz Rg=50 Ta=25C 12 2SC2404 NF -- IE f=100MHz Rg=50k Ta=25C 20 18 yie=gie+jbie VCE=10V 150 -4mA 100 bie -- gie Input susceptance bie (mS) 10 16 14 12 58 -2mA 100 -7mA VCE=10V 6V Noise figure NF (dB) Power gain PG (dB) 30 25 20 15 10 5 0 - 0.1 - 0.3 8 6 10 8 6 4 2 -1mA IE=- 0.5mA 58 4 VCE=6V, 10V 25 25 2 f=10.7MHz -1 -3 -10 -30 -100 0 - 0.1 - 0.3 0 -1 -3 -10 -30 -100 0 3 6 9 12 15 Emitter current IE (mA) Emitter current IE (mA) Input conductance gie (mS) bre -- gre 0 bfe -- gfe Forward transfer susceptance bfe (mS) - 0.4mA -1mA 100 150 -2mA 10.7 58 boe -- goe IE=- 0.5mA -1mA Reverse transfer susceptance bre (mS) yre=gre+jbre VCE=10V -1 -4mA -2 10.7 25 0 1.2 150 -2mA -4mA 100 -20 Output susceptance boe (mS) 1.0 -1mA 58 IE=-7mA -40 150 -4mA 100 58 0.8 -7mA 0.6 58 0.4 25 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 yoe=goe+jboe VCE=10V 0.4 0.5 -3 -60 f=150MHz IE=-7mA 100 -4 100 -80 -5 f=150MHz -6 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 -100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100 -120 Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) Output conductance goe (mS) 3 |
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